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BY133-LF PDF预览

BY133-LF

更新时间: 2024-01-03 20:33:15
品牌 Logo 应用领域
WTE 二极管
页数 文件大小 规格书
4页 57K
描述
Rectifier Diode, 1 Element, 1A, 1300V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

BY133-LF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.12
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2湿度敏感等级:2
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260最大重复峰值反向电压:1300 V
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BY133-LF 数据手册

 浏览型号BY133-LF的Datasheet PDF文件第2页浏览型号BY133-LF的Datasheet PDF文件第3页浏览型号BY133-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
1.0A HIGH VOLTAGE STANDARD DIODE  
BY133  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: DO-41, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.35 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-41  
Dim  
A
Min  
25.4  
4.06  
0.71  
2.00  
Max  
!
!
!
!
!
B
5.21  
0.864  
2.72  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
BY133  
Unit  
VRRM  
VRWM  
VR  
1300  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
910  
1.0  
V
A
Average Rectified Output Current (Note 1)  
@TA = 75°C  
Non-Repetitive Peak Forward Surge Current 8.3ms Single  
half sine-wave superimposed on rated load (JEDEC Method)  
IFSM  
VFM  
IRM  
30  
A
V
Forward Voltage  
@IF = 1.0A  
1.0  
Peak Reverse Current  
@TA = 25°C  
5.0  
50  
µA  
pF  
At Rated DC Blocking Voltage  
@TA = 100°C  
Typical Junction Capacitance (Note 2)  
Cj  
RJA  
Tj  
15  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating Temperature Range  
50  
°C/W  
°C  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TSTG  
°C  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
BY133  
1 of 4  
© 2006 Won-Top Electronics  

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