Datasheet > BWS-80-100-TS5

BWS-80-100-TS5

更新时间： 2024-11-12 01:10:51

品牌	Logo	应用领域
BWTECH		/
页数	文件大小	规格书
8页	170K
描述
93mil 120V Trench Schottky Wafer

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中文翻译

获取价格

数据手册

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BWS-80-100-TS5 数据手册

BWS-93-120-TS5!

93mil 120V Trench Schottky Wafer

DIM

DESCRIPTION

Die Size

2,362

2,158

228

MIL

Die Size

Metal Pad

Thickness/min

Thickness/max

AlSiCu

T/min

T/max

280

Top Metal

Backside Metal

Wafer Size

Scribe Line

Gross Die

40KA

25KA

TiNiAg

6”

2818

Electrical Characteristics

SYMBOL

DESCRIPTION

DC Blocking Voltage

Average Forward current

SPEC

120

UNIT

VRRM

IFAV

Voltage

Amp

VB MIN

Minimum Breakdown Voltage at 1.0mA, 25°C

125

Voltage

Nonrepetitive Peak Surge Current-half sine-wave

60hz

IFSM

215

Amp

Operation Junction Temperature

Storage Temperature

-55 to +150

°C

TSTG

Parameters Rating

SYMBOL

DESCRIPTION

TYPICAL

0.48

SPEC

UNIT

VF1

Maximum Instantaneous Forward voltage at 3A, 25°C

Maximum Instantaneous Forward voltage at 5A, 25°C

Maximum Instantaneous Forward voltage at 3A, 125°C

Maximum Instantaneous Forward voltage at 5A, 125°C

0.53

0.58

VF2

0.54

VF1H

VF2H

0.49

0.53

100

Maximum Instantaneous Reverse current at VR=120V,

25°C

IR1

Maximum Instantaneous Reverse current at VR=120V,

125°C

IR1H

NOTE

Speciﬁcation is applied to die only. Actual performance may degrade when assembled. BW does not

guarantee device performance after assembly.

Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months. ꢀ

Data sheet information is subjected to change without notice. ꢀ

Suggest Soldering proﬁle (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min. ꢀ

version-A/ 2013

12 3 4 5 6 7 8

中文翻译

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