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BUZ31C67078-S1304A2 PDF预览

BUZ31C67078-S1304A2

更新时间: 2024-09-23 23:38:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 91K
描述
TRANSISTOR TO 220 MOSFET N KANAL

BUZ31C67078-S1304A2 数据手册

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BUZ 31  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
Package  
Ordering Code  
V
I
R
DS(on)  
DS  
D
BUZ 31  
200 V  
14.5 A  
0.2  
TO-220 AB  
C67078-S.1304-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 30 ˚C  
14.5  
C
Pulsed drain current  
Dpuls  
T = 25 ˚C  
58  
14.5  
9
C
Avalanche current,limited by T  
jmax  
AR  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
E
mJ  
jmax  
AR  
AS  
I = 14.5 A, V  
= 50 V, R  
= 25 Ω  
D
DD  
GS  
L = 1.42 mH, T = 25 ˚C  
200  
j
Gate source voltage  
Power dissipation  
V
P
±
20  
V
GS  
tot  
W
T = 25 ˚C  
95  
C
Operating temperature  
Storage temperature  
T
T
-55 ... + 150  
-55 ... + 150  
˚C  
j
stg  
Thermal resistance, chip case  
R
R
1.32  
75  
K/W  
thJC  
thJA  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
E
55 / 150 / 56  
Data Sheet  
1
05.99  

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