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BUZ172 PDF预览

BUZ172

更新时间: 2024-11-26 23:14:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
9页 188K
描述
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

BUZ172 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N雪崩能效等级(Eas):170 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5.5 A
最大漏源导通电阻:0.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):22 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BUZ172 数据手册

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BUZ 172  
®
SIPMOS Power Transistor  
• P channel  
• Enhancement mode  
• Avalanche rated  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
)
DS(on  
Package  
Ordering Code  
D
BUZ 172  
-100 V  
-5.5 A  
0.6 Ω  
TO-220 AB  
C67078-S1451-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
-5.5  
Unit  
Continuous drain current  
I
A
D
T = 37 °C  
C
Pulsed drain current  
I
Dpuls  
T = 25 °C  
C
-22  
Avalanche energy, single pulse  
I = -5.5 A, V = -25 V, R = 25  
E
AS  
mJ  
D
DD  
GS  
L = 8.4 mH, T = 25 °C  
170  
j
Gate source voltage  
Power dissipation  
V
P
± 20  
V
GS  
W
tot  
T = 25 °C  
C
40  
Operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
Thermal resistance, chip case  
R
3.1  
75  
K/W  
thJC  
thJA  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
E
55 / 150 / 56  
Semiconductor Group  
1
07/96  

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