是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220AB, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.3 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 170 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 5 A | 最大漏极电流 (ID): | 5.5 A |
最大漏源导通电阻: | 0.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 22 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ172-E3044 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
BUZ172-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
BUZ172-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
BUZ173 | INFINEON |
获取价格 |
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | |
BUZ173-E3044 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met | |
BUZ173-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met | |
BUZ173-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met | |
BUZ18 | INFINEON |
获取价格 |
main ratings | |
BUZ20 | INTERSIL |
获取价格 |
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET | |
BUZ20 | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |