BUZ12A

更新时间： 2024-11-26 23:14:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	124K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BUZ12A 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.82
配置：	Single	最大漏极电流 (Abs) (ID)：	33 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	75 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

BUZ12A 数据手册

BUZ 12 A

Not for new design

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

DS(on)

Package

Ordering Code

Ω

BUZ 12 A

50 V

42 A

0.035

TO-220 AB

C67078-S1331-A3

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 44 °C

Pulsed drain current

Dpuls

T = 25 °C

168

Avalanche current,limited by T

jmax

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

2.5

jmax

Ω

I = 42 A, V = 25 V, R = 25

L = 23.2 µH, T = 25 °C

Gate source voltage

Power dissipation

tot

T = 25 °C

125

Operating temperature

Storage temperature

-55 ... + 150 °C

-55 ... + 150

stg

≤

Thermal resistance, chip case

K/W

thJC

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

thJA

55 / 150 / 56

Semiconductor Group

07/96

12 3 4 5 6 7...9

中文翻译

下载PDF

与BUZ12A相关器件

型号	品牌	获取价格	描述	数据表
BUZ12A-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
BUZ12A-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
BUZ12A-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
BUZ12AL	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
BUZ12AL-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
BUZ12AL-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
BUZ12AL-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Met
BUZ12-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
BUZ12-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
BUZ12-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met