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BUY69B PDF预览

BUY69B

更新时间: 2024-11-20 06:44:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 118K
描述
Silicon NPN Power Transistors

BUY69B 数据手册

 浏览型号BUY69B的Datasheet PDF文件第2页浏览型号BUY69B的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUY69A BUY69B BUY69C  
DESCRIPTION  
·With TO-3 package  
·High voltage capability  
APPLICATIONS  
·For horizontal deflection output stage  
of CTV receivers and high voltalge,  
fast switching and industrial applications  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
1000  
800  
500  
400  
325  
200  
8
UNIT  
BUY69A  
BUY69B  
BUY69C  
BUY69A  
BUY69B  
BUY69C  
VCBO  
Collector-base voltage  
Open emitter  
V
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
10  
Collector current-peak  
Base current  
15  
A
3.0  
A
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
100  
200  
-65~200  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance from junction to case  
MAX  
UNIT  
Rth j-c  
1.75  
/W  

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