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BUY49SPBFREE PDF预览

BUY49SPBFREE

更新时间: 2024-11-05 13:06:03
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管高压
页数 文件大小 规格书
2页 492K
描述
Small Signal Bipolar Transistor,

BUY49SPBFREE 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.71Is Samacsys:N
最大集电极电流 (IC):3 A配置:Single
最小直流电流增益 (hFE):16JESD-609代码:e3
最高工作温度:200 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:NO
端子面层:MATTE TIN OVER NICKEL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称过渡频率 (fT):50 MHzBase Number Matches:1

BUY49SPBFREE 数据手册

 浏览型号BUY49SPBFREE的Datasheet PDF文件第2页 
BUY49S  
www.centralsemi.com  
HIGH VOLTAGE  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BUY49S is a  
NPN Silicon Transistor designed for high voltage,  
high current applications.  
MARKING: FULL PART NUMBER  
TO-39 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
250  
200  
CBO  
CEO  
EBO  
V
V
6.0  
Continuous Collector Current  
Peak Collector Current  
I
3.0  
A
C
I
5.0  
A
CM  
Power Dissipation (T =25°C)  
A
P
1.0  
W
D
Operating and Storage Junction Temperature  
T , T  
-65 to +200  
15  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
°C/W  
JC  
JA  
Thermal Resistance  
Θ
175  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=200V  
0.1  
µA  
CBO  
CB  
I
V
=200V, T =150°C  
50  
µA  
V
CBO  
CB  
C
BV  
BV  
BV  
I =100µA  
250  
200  
6.0  
CBO  
CEO  
EBO  
C
I =20mA  
V
C
I =1.0mA  
V
E
V
V
I =500mA, I =50mA  
0.2  
1.1  
V
CE(SAT)  
BE(SAT)  
FE  
C
B
I =500mA, I =50mA  
V
C
B
h
h
h
V
=5.0V, I =20mA  
40  
40  
16  
50  
CE  
CE  
CE  
CE  
CB  
CC  
CC  
CE  
C
V
V
V
V
V
V
V
=5.0V, I =500mA  
FE  
C
=2.0V, I =20mA, T =–55°C  
FE  
C
C
f
=10V, I =100mA  
MHz  
pF  
µs  
T
C
C
=10V, I =0, f=1.0MHz  
30  
0.3  
1.0  
ob  
E
t
t
I
=20V, I =500mA, I =I =50mA  
on  
C
B1 B2  
=20V, I =500mA, I =I =50mA  
µs  
off  
C
B1 B2  
*
=50V  
0.2  
A
S/B  
* Pulsed: 1.0s non repetitive pulse.  
R0 (27-August 2010)  

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