Datasheet > BUX87-1100

BUX87-1100

更新时间： 2024-09-25 22:12:27

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
6页	45K
描述
Silicon Diffused Power Transistor

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中文翻译

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数据手册

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BUX87-1100 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUX87-1100

GENERAL DESCRIPTION

High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the

dynamic focus circuit of televisions and monitors.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1100

700

0.5

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

P_tot

T_mb≤ 25 ˚C

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

emitter

tab

collector

base

tab collector

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1100

700

0.5

0.2

0.3

150

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

I_B

Collector current (peak value) t_p= 2 ms

Base current (DC)

Base current (peak value)

Reverse base current (peak value)¹

Total power dissipation

Storage temperature

Junction temperature

I_BM

-I_BM

P_tot

T_stg

T_j

T_mb≤ 25 ˚C

˚C

-40

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Junction to mounting base

Junction to ambient

2.7

K/W

in free air

1 Turn-off current.

November 1999

Rev 1.000

12 3 4 5 6

中文翻译

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