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BUX84BS PDF预览

BUX84BS

更新时间: 2024-09-23 13:32:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
60页 347K
描述
2A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BUX84BS 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

BUX84BS 数据手册

 浏览型号BUX84BS的Datasheet PDF文件第2页浏览型号BUX84BS的Datasheet PDF文件第3页浏览型号BUX84BS的Datasheet PDF文件第4页浏览型号BUX84BS的Datasheet PDF文件第5页浏览型号BUX84BS的Datasheet PDF文件第6页浏览型号BUX84BS的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
2 AMPERES  
POWER TRANSISTOR  
NPN SILICON  
450 VOLTS  
The BUX85 is designed for high voltage, high speed power switching applications  
like converters, inverters, switching regulators, motor control systems.  
50 WATTS  
SPECIFICATIONS FEATURES:  
V
V
450 V  
1000 V  
CEO(sus)  
CES(sus)  
Fall time = 0.3 µs (typ) at I = 1.0 A  
V
C
= 1.0 V (max) at I = 1.0 A, I = 0.2 A  
CE(sat)  
C B  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
BUX84  
400  
BUX85  
450  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
CEO(sus)  
V
800  
1000  
CES  
EBO  
V
5
Collector Current  
— Continuous  
— Peak (1)  
I
2
3.0  
C
I
CM  
Base Current  
— Continuous  
— Peak (1)  
Adc  
I
0.75  
1.0  
B
I
I
BM  
Reverse Base Current — Peak  
1
Adc  
BM  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
50  
400  
Watts  
mW/ C  
Operating and Storage Junction Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.5  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
θJC  
62.5  
275  
θJA  
Maximum Lead Temperature for Soldering Purpose:  
1/8from Case for 5 Seconds  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
REV 7  
3–408  
Motorola Bipolar Power Transistor Device Data  

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