Datasheet > 晶体管 > 功率双极晶体管> BUW34LEADFREE

BUW34LEADFREE

更新时间： 2024-01-28 10:10:07

品牌	Logo	应用领域
CENTRAL		晶体晶体管局域网
页数	文件大小	规格书
2页	202K
描述
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BUW34LEADFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.66	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

BUW34LEADFREE 数据手册

BUW34

BUW35

BUW36

Central

Semiconductor Corp.

NPN SILICON

POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BUW34, BUW35,

and BUW36 types are silicon NPN power transistors

designed for high voltage, fast switching applications.

MARKING: FULL PART NUMBER

TO-3 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL BUW34

BUW35

800

BUW36

900

UNITS

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

400

CES

CEO

EBO

400

450

7.0

Base Current

5.0

Power Dissipation

125

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +200

1.4

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

500

UNITS

=Rated V

=7.0V

μA

CES

EBO

CES

, T =125

°C

I =100mA (BUW34, BUW35)

400

450

CEO

I =100mA (BUW36)

CEO

I =5.0A, I =1.0A

1.5

3.0

1.5

1.8

CE(SAT)

BE(SAT)

I =8.0A, I =2.5A (BUW35)

I =8.0A, I =2.5A (BUW36)

I =5.0A, I =1.0A

I =8.0A, I =2.5A (BUW35, BUW36)

=5.0V, I =1.0A

I =5.0A, I =1.0A, V =250V

0.7

3.8

μs

off

I =5.0A, I =I =1.0A, V =250V

R0 (5-March 2008)

下载PDF

与BUW34LEADFREE相关器件

型号	品牌	描述	获取价格	数据表
BUW34PBFREE	CENTRAL	Power Bipolar Transistor,	获取价格
BUW35	ISC	Silicon NPN Power Transistors	获取价格
BUW35	SAVANTIC	Silicon NPN Power Transistors	获取价格
BUW35	JMNIC	Silicon NPN Power Transistors	获取价格
BUW35	SEME-LAB	Bipolar NPN Device	获取价格
BUW35	CENTRAL	Power Transistors	获取价格