Datasheet > BUW133

BUW133

更新时间： 2024-02-24 17:22:40

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	111K
描述
isc Silicon NPN Power Transistors

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中文翻译

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数据手册

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BUW133 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BUW133/A

DESCRIPTION

·High Switching Speed

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 450V (Min)-BUW133

500V (Min)-BUW133A

APPLICATIONS

·Designed for use in very fast switching applications in

inductive circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

MAX

850

UNIT

BUW133

BUW133A

BUW133

BUW133A

Collector- Emitter

Voltage(V_BE= 0)

V_CES

1000

450

Collector-Emitter

Voltage

V_CEO

500

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

I_BM

P_C

T_j

Base Current-Peak

Collector Power Dissipation

@T_C=25℃

135

150

-65~150

℃

Junction Temperature

T_stg

Storage Temperature Range

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

0.93

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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