Datasheet > BUW12

BUW12

更新时间： 2024-11-04 06:44:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	121K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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BUW12 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

BUW12 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUW12 BUW12A

DESCRIPTION

·With TO-3PN package

·High voltage,fast speed

·Low collector saturation voltage

APPLICATIONS

·Specially intended for operating

In industrial applications

PINNING (See Fig.2)

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

850

1000

400

450

UNIT

BUW12

BUW12A

BUW12

BUW12A

V_CBO

Collector-base voltage

Open emitter

Open base

V_CEO

Collector-emitter voltage

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

P_T

T_j

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

125

150

-65~175

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.2

℃/W

12 3

中文翻译

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