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BUV50 PDF预览

BUV50

更新时间: 2024-11-04 06:44:51
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 117K
描述
Silicon NPN Power Transistors

BUV50 数据手册

 浏览型号BUV50的Datasheet PDF文件第2页浏览型号BUV50的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUV50  
DESCRIPTION  
·With TO-3 package  
·High dielectric strength  
·Short switching time  
APPLICATIONS  
·Suitable for use in clocked  
voltatge converters  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
250  
125  
7
UNIT  
V
Open base  
V
Open collector  
V
25  
A
ICM  
Collector current-peak  
Base current  
50  
A
IB  
6
A
IBM  
Base current-peak  
12  
A
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
Tmb25ꢀ  
150  
150  
-65~200  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance from junction to case  
1.17  
/W  

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