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BUV48/D PDF预览

BUV48/D

更新时间: 2024-02-13 21:11:18
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 143K
描述
SWITCHMODE II Series NPN Silicon Power Transistors

BUV48/D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.64
最大集电极电流 (IC):15 A配置:Single
最小直流电流增益 (hFE):6JESD-609代码:e0
最高工作温度:175 °C极性/信道类型:NPN
最大功率耗散 (Abs):150 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BUV48/D 数据手册

 浏览型号BUV48/D的Datasheet PDF文件第2页浏览型号BUV48/D的Datasheet PDF文件第3页浏览型号BUV48/D的Datasheet PDF文件第4页浏览型号BUV48/D的Datasheet PDF文件第5页浏览型号BUV48/D的Datasheet PDF文件第6页浏览型号BUV48/D的Datasheet PDF文件第7页 
ON Semiconductort  
BUV48  
SWITCHMODEt II Series  
BUV48A  
NPN Silicon Power Transistors  
The BUV48/BUV48A transistors are designed for high–voltage,  
high–speed, power switching in inductive circuits where fall time is  
critical. They are particularly suited for line–operated  
SWITCHMODE applications such as:  
15 AMPERES  
NPN SILICON  
POWER TRANSISTORS  
400 AND 450 VOLTS  
V(BR)CEO  
Switching Regulators  
Inverters  
850–1000 VOLTS  
V(BR)CEX  
Solenoid and Relay Drivers  
Motor Controls  
150 WATTS  
Deflection Circuits  
Fast Turn–Off Times  
60 ns Inductive Fall Time — 25_C (Typ)  
120 ns Inductive Crossover Time — 25_C (Typ)  
Operating Temperature Range –65 to +175_C  
100_C Performance Specified for:  
Reverse–Biased SOA with Inductive Loads  
Switching Times with Inductive Loads  
Saturation Voltage  
Leakage Currents (125_C)  
CASE 340D–02  
TO–218 TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
BUV48  
400  
BUV48A  
450  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
V
CEO(sus)  
Collector–Emitter Voltage (V = –1.5 V)  
V
CEX  
850  
1000  
BE  
Emitter Base Voltage  
V
EB  
7
Collector Current — Continuous  
— Peak (1)  
I
C
15  
30  
60  
I
CM  
— Overload  
I
OI  
Base Current — Continuous  
— Peak (1)  
I
5
20  
Adc  
B
I
BM  
Total Power Dissipation — T = 25_C  
P
150  
75  
1
Watts  
C
D
— T = 100_C  
C
Derate above 25_C  
Operating and Storage Junction Temperature Range  
W/_C  
_C  
T , T  
J
–65 to +175  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1
Unit  
_C/W  
_C  
Thermal Resistance, Junction to Case  
R
θ
JC  
L
Maximum Lead Temperature for Soldering Purposes:  
1/8from Case for 5 Seconds  
T
275  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 10  
BUV48/D  

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