ON Semiconductort
BUV48
SWITCHMODEt II Series
BUV48A
NPN Silicon Power Transistors
The BUV48/BUV48A transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is
critical. They are particularly suited for line–operated
SWITCHMODE applications such as:
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
V(BR)CEO
• Switching Regulators
• Inverters
850–1000 VOLTS
V(BR)CEX
• Solenoid and Relay Drivers
• Motor Controls
150 WATTS
• Deflection Circuits
• Fast Turn–Off Times
60 ns Inductive Fall Time — 25_C (Typ)
120 ns Inductive Crossover Time — 25_C (Typ)
• Operating Temperature Range –65 to +175_C
• 100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125_C)
CASE 340D–02
TO–218 TYPE
MAXIMUM RATINGS
Rating
Symbol
BUV48
400
BUV48A
450
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
V
CEO(sus)
Collector–Emitter Voltage (V = –1.5 V)
V
CEX
850
1000
BE
Emitter Base Voltage
V
EB
7
Collector Current — Continuous
— Peak (1)
I
C
15
30
60
I
CM
— Overload
I
OI
Base Current — Continuous
— Peak (1)
I
5
20
Adc
B
I
BM
Total Power Dissipation — T = 25_C
P
150
75
1
Watts
C
D
— T = 100_C
C
Derate above 25_C
Operating and Storage Junction Temperature Range
W/_C
_C
T , T
J
–65 to +175
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1
Unit
_C/W
_C
Thermal Resistance, Junction to Case
R
θ
JC
L
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
T
275
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 10
BUV48/D