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BUV48CFI PDF预览

BUV48CFI

更新时间: 2024-01-22 03:51:50
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
6页 50K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BUV48CFI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.64
最大集电极电流 (IC):15 A配置:Single
最小直流电流增益 (hFE):6JESD-609代码:e0
最高工作温度:175 °C极性/信道类型:NPN
最大功率耗散 (Abs):150 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BUV48CFI 数据手册

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BUX48C/BUV48C  
BUV48CFI  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTORS  
NPN TRANSISTORS  
HIGH VOLTAGE CAPABILITY  
FAST SWITCHING SPEED  
APPLICATIONS  
1
3
LINEAR AND SWITCHING INDUSTRIAL  
2
EQUIPMENT  
2
1
TO-3  
TO-218  
DESCRIPTION  
The BUX48C,BUV48C and BUV48CFI are silicon  
Multiepitaxial Mesa NPN transistors mounted  
respectively in TO-3 metal case, TO-218 plastic  
package and ISOWATT218 fully isolated  
package. They are particulary intended for  
switching and industrial applications from single  
and tree-phasemains.  
3
2
1
ISOWATT218  
INTERNAL SCHEMATIC DIAGRAM  
For TO-3 Package  
Others Packages  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCER  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (RBE = 10)  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1200  
1200  
700  
7
V
V
V
V
A
A
A
A
A
15  
ICM  
30  
Collector Peak Current (tp <5ms)  
Collector Peak Current non repetitive (tp <20µs)  
Base Current  
ICP  
55  
IB  
4
IBM  
20  
Base Peak Current (tp <5ms)  
TO-3  
TO-218  
125  
ISOWATT218  
55  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
Ptot  
Tstg  
Tj  
175  
W
oC  
oC  
-65 to 200 -65 to 150  
200 150  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
January 2000  

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