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BUV48B PDF预览

BUV48B

更新时间: 2024-11-04 06:44:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 104K
描述
isc Silicon NPN Power Transistor

BUV48B 数据手册

 浏览型号BUV48B的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUV48B  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 600V (Min)  
·High Current Capability  
·Fast Switching Speed  
APPLICATIONS  
·Designed for switching and industrial applications from  
single and three-phase mains.  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCER  
VCES  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
1200  
1200  
600  
7
UNIT  
V
Collector-Emitter Voltage  
(RBE= 10Ω)  
Collector-Emitter Voltage  
(VBE= 0)  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Collector Current-Continuous  
Collector Current-Peak tp< 5ms  
Base Current-Continuous  
Base Current-peak tp< 5ms  
15  
A
ICM  
30  
A
IB  
4
A
IBM  
20  
A
Collector Power Dissipation  
@TC=25℃  
PC  
125  
150  
-65~150  
W
Tj  
Junction Temperature  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
1.0  
/W  
Thermal Resistance,Junction to Case  
Rth j-c  
isc Websitewww.iscsemi.cn  

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