Datasheet > BUT56A

BUT56A

更新时间： 2024-11-14 22:39:43

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管开关输出元件高压
页数	文件大小	规格书
1页	24K
描述
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE)

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数据手册

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BUT56A 数据手册

BUT56A

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING USE IN

HORIZONTAL DEFLECTION OUTPUT STAGE

SC-65

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Characteristic

Collector-Base Voltage

Collector-EmitterVoltage

Emitter-Base voltage

Collector Current (DC)

Collector Peck Current

Base Current (DC)

Symbol

Rating

Unit

VCBO

VCEO

VEBO

ICM

1000

450

Tstg

100

150

-65~150

°C

Collector Dissipation (Tc=25°C)

Junction Temperature

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Unit

Characterristic

Symbol

Test Condition

Min

Typ

Max

MHZ

µS

Collector Cutoff Current (VBE=0)

Emitter Cutoff Current(IC=0)

Collector Emitter Saturation Voltage

Base- Emitter Saturation Voltage

Current Gain Bandwith Product

Turn-Off Time

ICES

IEBO

VCE(sat)

VBE(sat) IC=5A,

VCE= 800V , VEB= 0

2.5

VEB= 6V ,

IC=5A,

IC=0

IB=0.5A

IB=1.2A

VCE= 10V , IC=500mA

toff

IC=4A,

IC=5A,

IB=0.4A

IB=0.6A

IB=1.0A

0.75

0.5

µS

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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