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BUT47CAJ PDF预览

BUT47CAJ

更新时间: 2024-11-14 19:38:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 局域网开关晶体管
页数 文件大小 规格书
4页 156K
描述
8A, 550V, NPN, Si, POWER TRANSISTOR, TO-220AB

BUT47CAJ 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:550 V配置:SINGLE
最小直流电流增益 (hFE):8JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:100 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):12 MHzBase Number Matches:1

BUT47CAJ 数据手册

 浏览型号BUT47CAJ的Datasheet PDF文件第2页浏览型号BUT47CAJ的Datasheet PDF文件第3页浏览型号BUT47CAJ的Datasheet PDF文件第4页 

与BUT47CAJ相关器件

型号 品牌 获取价格 描述 数据表
BUT47CC MOTOROLA

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Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47CD1 MOTOROLA

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8A, 550V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUT47CL MOTOROLA

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Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47CN MOTOROLA

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Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47CS MOTOROLA

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8A, 550V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUT47CT MOTOROLA

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Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47CU MOTOROLA

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Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47CU2 MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47CUA MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47CW MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast