5秒后页面跳转
BUT34 PDF预览

BUT34

更新时间: 2024-11-13 22:39:43
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管达林顿晶体管开关局域网
页数 文件大小 规格书
8页 290K
描述
50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS

BUT34 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, O-MBFM-P2Reach Compliance Code:unknown
风险等级:5.85外壳连接:COLLECTOR
最大集电极电流 (IC):50 A集电极-发射极最大电压:500 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):15
JEDEC-95代码:TO-204AEJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):250 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUT34 数据手册

 浏览型号BUT34的Datasheet PDF文件第2页浏览型号BUT34的Datasheet PDF文件第3页浏览型号BUT34的Datasheet PDF文件第4页浏览型号BUT34的Datasheet PDF文件第5页浏览型号BUT34的Datasheet PDF文件第6页浏览型号BUT34的Datasheet PDF文件第7页 
Order this document  
by BUT34/D  
SEMICONDUCTOR TECHNICAL DATA  
50 AMPERES  
NPN SILICON  
POWER DARLINGTON  
TRANSISTOR  
850 VOLTS  
250 WATTS  
The BUT34 Darlington transistor is designed for high–voltage, high–speed, power  
switching in inductive circuits where fall time is critical. They are particularly suited for  
line–operated SWITCHMODE applications such as:  
AC and DC Motor Controls  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Fast Turn–Off Times  
CASE 197A–05  
TO–204AE  
(TO–3)  
0.7 µs Inductive Fall Time at 25 C (Typ)  
1.8 µs Inductive Storage Time at 25 C (Typ)  
Operating Temperature Range 65 to 200 C  
50  
8  
MAXIMUM RATINGS  
Rating  
Symbol  
BUT34  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
500  
850  
10  
CEO(sus)  
V
CEV  
V
EB  
Collector Current — Continuous  
Collector Current — Peak (1)  
I
C
50  
75  
I
I
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
B
10  
15  
Adc  
Adc  
BM  
Free Wheel Diode Forward Current — Continuous  
Free Wheel Diode Forward Current — Peak  
I
F
50  
75  
FM  
Total Power Dissipation @ T = 25 C  
P
250  
140  
Watts  
C
D
@ T = 100 C  
C
Derate above 25 C  
W/ C  
C
Operating and Storage Junction Temperature Range  
T , T  
J
65 to +200  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
0.7  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
R
θJC  
Maximum Lead Temperature for Soldering Purpose:  
1/8from Case for 5 Seconds  
T
L
275  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
REV 7  
Motorola, Inc. 1995

与BUT34相关器件

型号 品牌 获取价格 描述 数据表
BUT35 ETC

获取价格

TRANSISTOR | BJT | DARLINGTON | NPN | 700V V(BR)CEO | 40A I(C) | TO-204AE
BUT46 ANALOGICTECH

获取价格

POWER TRANSISTORS
BUT46 ISC

获取价格

Silicon NPN Power Transistor
BUT46A ISC

获取价格

Silicon NPN Power Transistor
BUT46A ANALOGICTECH

获取价格

POWER TRANSISTORS
BUT47C16 MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47C16A MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47CA MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUT47CAF MOTOROLA

获取价格

8A, 550V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUT47CAJ MOTOROLA

获取价格

8A, 550V, NPN, Si, POWER TRANSISTOR, TO-220AB