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BUT33/D PDF预览

BUT33/D

更新时间: 2024-09-23 23:38:51
品牌 Logo 应用领域
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页数 文件大小 规格书
8页 129K
描述
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode

BUT33/D 数据手册

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ON Semiconductort  
BUT33  
SWITCHMODEt Series  
NPN Silicon Power Darlington  
Transistors with Base-Emitter  
Speedup Diode  
56 AMPERES  
NPN SILICON  
POWER DARLINGTON  
TRANSISTOR  
600 VOLTS  
250 WATTS  
The BUT33 Darlington transistor is designed for high–voltage,  
high–speed, power switching in inductive circuits where fall time is  
critical. They are particularly suited for line operated SWITCHMODE  
applications such as:  
AC and DC Motor Controls  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Fast Turn Off Times  
CASE 197A–05  
TO–204AE  
(TO–3)  
800 ns Inductive Fall Time at 25_C (Typ)  
2.0 µs Inductive Storage Time at 25_C (Typ)  
Operating Temperature Range –65 to 200_C  
100  
16  
MAXIMUM RATINGS  
Rating  
Symbol  
BUT33  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
400  
600  
10  
CEO(sus)  
V
CEV  
V
EB  
Collector Current — Continuous  
Collector Current — Peak (1)  
I
C
56  
75  
I
I
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
B
12  
15  
Adc  
Adc  
BM  
Free Wheel Diode Forward Current — Continuous  
Free Wheel Diode Forward Current — Peak  
I
F
56  
75  
FM  
Total Power Dissipation @ T = 25_C  
P
250  
140  
Watts  
C
D
@ T = 100_C  
C
Derate above 25_C  
Operating and Storage Junction Temperature Range  
W/_C  
_C  
T , T  
J
–65 to +200  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
0.7  
Unit  
_C/W  
_C  
Thermal Resistance, Junction to Case  
R
θ
JC  
L
Maximum Lead Temperature for Soldering Purpose  
1/8from Case for 5 Seconds  
T
275  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle x10%.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 9  
BUT33/D  

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