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BUT32V_03 PDF预览

BUT32V_03

更新时间: 2024-11-14 03:23:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
7页 370K
描述
NPN TRANSISTOR POWER MODULE

BUT32V_03 数据手册

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BUT32V  
®
NPN TRANSISTOR POWER MODULE  
HIGH CURRENT POWER BIPOLAR MODULE  
VERY LOW Rth JUNCTION CASE  
SPECIFIED ACCIDENTAL OVERLOAD  
AREAS  
FULLY INSULATED PACKAGE (U.L.  
COMPLIANT) FOR EASY MOUNTING  
LOW INTERNAL PARASITIC INDUCTANCE  
INDUSTRIAL APPLICATIONS:  
MOTOR CONTROL  
SMPS & UPS  
DC/DC & DC/AC CONVERTERS  
Pin 4 not connected  
ISOTOP  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Collector-Emitter Voltage (VBE = -5 V)  
Value  
400  
300  
7
Unit  
VCEV  
V
V
V
A
A
A
A
W
VCEO(sus) Collector-Emitter Voltage (IB = 0)  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage (IC = 0)  
Collector Current  
80  
Collector Peak Current (tp = 10 ms)  
Base Current  
120  
16  
IBM  
Ptot  
Visol  
Base Peak Current (tp = 10 ms)  
24  
o
Total Dissipation at Tc = 25 C  
250  
2500  
Insulation Withstand Voltage (RMS) from All  
Four Terminals to External Heatsink  
Tstg  
Tj  
Storage Temperature  
-55 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
1/7  
February 2003  

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