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BUT32V PDF预览

BUT32V

更新时间: 2024-11-13 22:39:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
7页 105K
描述
NPN TRANSISTOR POWER MODULE

BUT32V 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ISOTOP-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.8外壳连接:ISOLATED
最大集电极电流 (IC):80 A集电极-发射极最大电压:300 V
配置:SINGLE最大降落时间(tf):400 ns
JESD-30 代码:R-XUFM-X3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:250 W
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:BIP General Purpose Power表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONVCEsat-Max:0.9 V
Base Number Matches:1

BUT32V 数据手册

 浏览型号BUT32V的Datasheet PDF文件第2页浏览型号BUT32V的Datasheet PDF文件第3页浏览型号BUT32V的Datasheet PDF文件第4页浏览型号BUT32V的Datasheet PDF文件第5页浏览型号BUT32V的Datasheet PDF文件第6页浏览型号BUT32V的Datasheet PDF文件第7页 
BUT32V  
NPN TRANSISTOR POWER MODULE  
HIGH CURRENT POWER BIPOLAR MODULE  
VERY LOW Rth JUNCTION CASE  
SPECIFIED ACCIDENTAL OVERLOAD  
AREAS  
ISOLATED CASE (2500V RMS)  
EASY TO MOUNT  
LOW INTERNAL PARASITIC INDUCTANCE  
INDUSTRIAL APPLICATIONS:  
MOTOR CONTROL  
SMPS & UPS  
DC/DC & DC/AC CONVERTERS  
Pin 4 not connected  
ISOTOP  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Collector-Emitter Voltage (VBE = -5 V)  
Value  
400  
Unit  
VCEV  
V
V
VCEO(sus) Collector-Emitter Voltage (IB = 0)  
300  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage (IC = 0)  
Collector Current  
7
V
80  
A
Collector Peak Current (tp = 10 ms)  
Base Current  
120  
A
16  
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp = 10 ms)  
24  
A
o
Total Dissipation at Tc = 25 C  
250  
W
oC  
oC  
oC  
Storage Temperature  
-55 to 150  
150  
Max. Operating Junction Temperature  
Insulation Withstand Voltage (AC-RMS)  
VISO  
2500  
1/7  
September1997  

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