Datasheet > BUT30V_03

BUT30V_03

更新时间： 2024-11-14 03:23:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
7页	340K
描述
NPN TRANSISTOR POWER MODULE

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中文翻译

获取价格

数据手册

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BUT30V_03 数据手册

BUT30V

NPN TRANSISTOR POWER MODULE

■

NPN TRANSISTOR

HIGH CURRENT POWER BIPOLAR MODULE

VERY LOW R_thJUNCTION CASE

SPECIFIED ACCIDENTAL OVERLOAD

AREAS

■

FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

LOW INTERNAL PARASITIC INDUCTANCE

APPLICATIONS:

Pin 4 not connected

■

MOTOR CONTROL

SMPS & UPS

WELDING EQUIPMENT

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Collector-Emitter Voltage (V_BE= -5 V)

Value

200

125

Unit

V_CEV

V_CEO(sus)Collector-Emitter Voltage (I_B= 0)

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage (I_C= 0)

Collector Current

100

150

Collector Peak Current (t_p= 10 ms)

Base Current

I_BM

P_tot

V_isol

Base Peak Current (t_p= 10 ms)

Total Dissipation at T_c= 25 C

250

2500

Insulation Withstand Voltage (RMS) from All

Four Terminals to External Heatsink

Storage Temperature

T_stg

T_j

-55 to 150

150

^oC

Max. Operating Junction Temperature

1/7

February 2003

12 3 4 5 6 7

中文翻译

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BUT46	ANALOGICTECH	获取价格	POWER TRANSISTORS
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