Datasheet > BUT22BF

BUT22BF

更新时间： 2024-11-14 06:44:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	108K
描述
isc Silicon NPN Power Transistors

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中文翻译

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数据手册

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BUT22BF 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BUT22BF/CF

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)- BUT22BF

450V(Min)- BUT22CF

·High Switching Speed

APPLICATIONS

·Designed for use in converters, inverters, switching

regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

750

850

400

450

UNIT

BUT22BF

BUT22CF

BUT22BF

BUT22CF

Collector-Emitter Voltage

V_CES

V_BE= 0

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak t_p< 20ms

Base Current-Continuous

I_BM

P_C

T_J

Base Current-Peak t_p< 20ms

Collector Power Dissipation

@ T_C=25℃

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

5.5

UNIT

℃/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_{th j-c}

Rth j-a

isc Website：www.iscsemi.cn

中文翻译

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与BUT22BF相关器件

型号	品牌	获取价格	描述	数据表
BUT22C	ISC	获取价格	isc Silicon NPN Power Transistors
BUT22CF	ISC	获取价格	isc Silicon NPN Power Transistors
BUT230F	ETC	获取价格	TRANSISTOR \| BJT POWER MODULE \| INDEPENDENT \| 125V V(BR)CEO \| 200A I(C)
BUT230V	ETC	获取价格	TRANSISTOR \| BJT POWER MODULE \| INDEPENDENT \| 125V V(BR)CEO \| 200A I(C)
BUT232F	ETC	获取价格	TRANSISTOR \| BJT POWER MODULE \| INDEPENDENT \| 300V V(BR)CEO \| 210A I(C)
BUT232V	STMICROELECTRONICS	获取价格	NPN TRANSISTOR POWER MODULE
BUT232V_03	STMICROELECTRONICS	获取价格	NPN TRANSISTOR POWER MODULE
BUT30	STMICROELECTRONICS	获取价格	NPN TRANSISTOR POWER MODULE
BUT30F	ETC	获取价格	TRANSISTOR \| BJT POWER MODULE \| INDEPENDENT \| 125V V(BR)CEO \| 100A I(C)
BUT30V	STMICROELECTRONICS	获取价格	NPN TRANSISTOR POWER MODULE