Datasheet > BUT21CF

BUT21CF

更新时间： 2024-11-15 01:18:07

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无锡固电 - ISC		/
页数	文件大小	规格书
2页	193K
描述
isc Silicon NPN Power Transistors

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中文翻译

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数据手册

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BUT21CF 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BUT21BF/CF

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)- BUT21BF

450V(Min)- BUT21CF

·High Switching Speed

APPLICATIONS

·Designed for use in converters, inverters, switching

regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

750

850

400

450

UNIT

BUT21BF

BUT21CF

BUT21BF

BUT21CF

Collector-Emitter

Voltage V_BE= 0

V_CES

Collector-Emitter

Voltage

V_CEO

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_BM

P_C

T_J

Collector Power Dissipation

℃

@ T_C=25℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-c}

PARAMETER

MAX UNIT

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

6.46

℃/W

R_{th j-a}

isc website：www.iscsemi.cn

中文翻译

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BUT22BF	ISC	获取价格	isc Silicon NPN Power Transistors
BUT22C	ISC	获取价格	isc Silicon NPN Power Transistors
BUT22CF	ISC	获取价格	isc Silicon NPN Power Transistors
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