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BUT21BF

更新时间: 2024-11-15 01:18:07
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无锡固电 - ISC /
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2页 193K
描述
isc Silicon NPN Power Transistors

BUT21BF 数据手册

 浏览型号BUT21BF的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
BUT21BF/CF  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 400V(Min)- BUT21BF  
450V(Min)- BUT21CF  
·High Switching Speed  
APPLICATIONS  
·Designed for use in converters, inverters, switching  
regulators, motor control systems etc.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
750  
850  
400  
450  
9
UNIT  
BUT21BF  
BUT21CF  
BUT21BF  
BUT21CF  
Collector-Emitter  
Voltage VBE= 0  
VCES  
V
Collector-Emitter  
Voltage  
VCEO  
V
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
5
10  
A
2
A
IBM  
PC  
TJ  
4
A
Collector Power Dissipation  
20  
W
@ TC=25℃  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-c  
PARAMETER  
MAX UNIT  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
6.46  
55  
/W  
/W  
Rth j-a  
1
isc websitewww.iscsemi.cn  

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