SILICON DIFFUSED POWER TRANSISTOR
BUT12
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope ,primarily for use in switching power
circuits.
TO-220
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
PARAMETER
CONDITIONS
MIN
MAX
850
400
8
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
VBE = 0V
V
A
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
20
A
ICM
Ptot
VCEsat
Icsat
VF
Tmb 25
100
1.5
W
V
IC = 6.0A; IB = 1.2A
f = 16KHz
A
V
Fall time
IC=6A,IB1=-IB2=1.2A,VCC=150V
1.0
s
tf
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
PARAMETER
CONDITIONS
MIN
MAX
850
400
5
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage(open collector)
Collector current (DC)
VBE = 0V
V
V
8
A
Base current (DC)
4
A
IB
Base current peak value
Total power dissipation
Storage temperature
8
A
IBM
Ptot
Tstg
Tj
Tmb 25
100
150
150
W
-55
Junction temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
1.0
UNIT
mA
Collector-emitter cut-off current
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
ICE
ICES
2.0
mA
Collector-emitter sustaining voltage
IB = 0A; IC = 100mA
L = 25mH
V
VCEOsust
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
IC = 6.0A; IB = 1.2A
IC = 6.0A; IB = 1.2A
IC = 1.0A; VCE = 5V
1.5
1.5
50
V
V
VCEsat
VBEsat
hFE
VF
fT
Cc
10
5
Diode forward voltage
V
MHz
pF
s
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
IC = 0.1A; VCE = 10V
VCB = 10V
IC=6A,IB1=-IB2=1.2A,VCC=150V
IC=6A,IB1=-IB2=1.2A,VCC=150V
5.0
1.0
ts
tf
s
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com