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BUT12 PDF预览

BUT12

更新时间: 2024-11-15 06:44:47
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 136K
描述
isc Silicon NPN Power Transistor

BUT12 数据手册

 浏览型号BUT12的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUT12  
DESCRIPTION  
·High Voltage  
·High Speed Switching  
APPLICATIONS  
·Converters  
·Inverters  
·Switching regulators  
·Motor control systems  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
850  
400  
V
9
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
8
20  
A
ICM  
A
IB  
4
A
IBM  
6
A
Collector Power Dissipation  
@TC=25  
PC  
125  
150  
-65~150  
W
Tj  
Junction Temperature  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.0  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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