BUT11F

更新时间： 2024-11-15 06:44:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	78K
描述
isc Silicon NPN Power Transistor

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中文翻译

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BUT11F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUT11F

DESCRIPTION

·High Voltage

·High Speed Switching

APPLICATIONS

·Converters

·Inverters

·Switching regulators

·Motor control systems

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

VALUE

UNIT

850

400

I_CM

I_B

I_BM

Base Current-Peak

Collector Power Dissipation

@T_C=25℃

P_C

℃

T_j

Junction Temperature

150

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

3.95

K/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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与BUT11F相关器件

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BUT12	NXP	获取价格	Silicon diffused power transistors
BUT12	Wing Shing	获取价格	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
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