BUT11AFTU

更新时间： 2024-11-15 12:54:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关高压
页数	文件大小	规格书
4页	52K
描述
High Voltage Power Switching Applications

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中文翻译

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数据手册
替代型号

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BUT11AFTU 数据手册

BUT11F/11AF

High Voltage Power Switching Applications

TO-220F

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

CBO

: BUT11F

: BUT11AF

850

1000

CEO

: BUT11F

: BUT11AF

400

450

Emitter-Base Voltage

Collector Current (DC)

EBO

*Collector Current (Pulse)

Base Current (DC)

*Base Current (Pulse)

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

(sus)

* Collector-Emitter Sustaining Voltage

CEO

: BUT11F

: BUT11AF

= 100mA, I = 0

400

450

Collector Cut-off Current

: BUT11F

CES

= 850V, V = 0

: BUT11AF

= 1000V, V = 0

Emitter Cut-off Current

= 9V, I = 0

EBO

(sat)

Collector-Emitter Saturation Voltage

: BUT11F

= 3A, I = 0.6A

= 2.5A, I = 0.5A

1.5

: BUT11AF

(sat)

Base-Emitter Saturation Voltage

: BUT11F

= 3A, I = 0.6A

= 2.5A, I = 0.5A

1.3

: BUT11AF

Turn On Time

Storage Time

Fall Time

= 250V, I = 2.5A

µs

= -I = 0.5A

STG

R = 100Ω

0.8

* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Typ

Max

3.125

Units

Thermal Resistance, Junction to Case

°C/W

θjC

Rev. A2, August 2001

12 3 4

中文翻译

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BUT11AFTU 替代型号

型号	品牌	替代类型	描述	数据表
BUT11AF	FAIRCHILD	功能相似	High Voltage Power Switching Applications

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