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BUP23B PDF预览

BUP23B

更新时间: 2024-11-14 12:50:15
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 108K
描述
isc Silicon NPN Power Transistors

BUP23B 数据手册

 浏览型号BUP23B的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
BUP23B/C  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 400V (Min)-BUP23B  
450V (Min)-BUP23C  
·High Switching Speed  
APPLICATIONS  
·Designed for use in converters, inverters, switching  
regulators, motor control systems etc.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
750  
850  
400  
450  
9
UNIT  
BUP23B  
BUP23C  
BUP23B  
BUP23C  
Collector- Emitter  
Voltage(VBE= 0)  
VCES  
V
Collector-Emitter  
Voltage  
VCEO  
V
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
Collector Current- Continuous  
Collector Current-Peak  
Base Current- Continuous  
Base Current-Peak  
15  
30  
A
6
A
IBM  
PC  
TJ  
9
A
Collector Power Dissipation  
@ TC=25℃  
125  
150  
-65~150  
W
Junction Temperature  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
0.7  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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