Datasheet > BUP22BF

BUP22BF

更新时间： 2024-11-14 12:50:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	109K
描述
isc Silicon NPN Power Transistor

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中文翻译

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数据手册

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BUP22BF 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUP22BF/CF

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)-BUP22BF

= 450V(Min)-BUP22CF

·High Switching Speed

APPLICATIONS

·Designed for use in converters, inverters, switching-

regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

750

850

400

450

UNIT

BUP22BF

BUP22CF

BUP22BF

BUP22CF

Collector- Emitter

Voltage V_BE=0

V_CES

Collector-Emitter

Voltage

V_CEO

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_BM

P_C

T_J

Collector Power Dissipation

@ T_C=25℃

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance, Junction to Case

3.7

R_{th j-c}

Rth j-a

Thermal Resistance, Junction to Ambient

isc Website：www.iscsemi.cn

中文翻译

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BUP306D	INFINEON	获取价格	IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail curre