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BUL44F

更新时间： 2024-09-25 22:17:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
10页 319K
描述
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS

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中文翻译

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BUL44F 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SFM包装说明：PLASTIC, ISOLATED TO-220, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.8
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：2 A集电极-发射极最大电压：400 V
配置：SINGLE最小直流电流增益 (hFE)：8
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：225极性/信道类型：NPN
最大功率耗散 (Abs)：25 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：13 MHzBase Number Matches：1

BUL44F 数据手册

 浏览型号BUL44F的Datasheet PDF文件第2页浏览型号BUL44F的Datasheet PDF文件第3页浏览型号BUL44F的Datasheet PDF文件第4页浏览型号BUL44F的Datasheet PDF文件第5页浏览型号BUL44F的Datasheet PDF文件第6页浏览型号BUL44F的Datasheet PDF文件第7页 
Order this document  
by BUL44/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
*Motorola Preferred Device  
The BUL44/BUL44F have an applications specific state–of–the–art die designed  
for use in 220 V line operated Switchmode Power supplies and electronic light  
ballasts. These high voltage/high speed transistors offer the following:  
POWER TRANSISTOR  
2.0 AMPERES  
700 VOLTS  
40 and 100 WATTS  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Full Characterization at 125°C  
Tight Parametric Distributions are Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
•
BUL44F, Case 221D, is UL Recognized to 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol  
BUL44  
BUL44F  
Unit  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
400  
700  
9.0  
Vdc  
Vdc  
Vdc  
Adc  
CEO  
V
CES  
EBO  
V
BUL44  
CASE 221A–06  
TO–220AB  
Collector Current — Continuous  
— Peak(1)  
I
C
2.0  
5.0  
I
CM  
Base Current — Continuous  
— Peak(1)  
I
1.0  
2.0  
Adc  
B
I
BM  
RMS Isolated Voltage(2)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 22a  
Test No. 2 Per Fig. 22b  
Test No. 3 Per Fig. 22c  
V
ISOL  
—
—
—
4500  
3500  
1500  
Volts  
T
C
= 25°C)  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
50  
0.4  
25  
0.2  
Watts  
W/°C  
Operating and Storage Temperature  
T , T  
– 65 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
BUL44  
BUL44F  
Unit  
BUL44F  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
Thermal Resistance — Junction to Case  
R
θJC  
R
θJA  
2.5  
62.5  
5.0  
62.5  
°C/W  
— Junction to Ambient  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
400  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CEO  
B
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CE  
CES EB  
CES  
(T = 125°C)  
C
Collector Cutoff Current (V  
CE  
= 500 V, V  
EB  
= 0)  
(T = 125°C)  
C
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
1234567...10

中文翻译

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与BUL44F相关器件

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BUL44G ONSEMI

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 		For Switching Power Supply Applicationsl
BUL44L MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44N MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44S MOTOROLA

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 		2A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL44T MOTOROLA

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 		2A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL44U MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44U2 MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44UA MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44W MOTOROLA

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 		2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL44WD MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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