5秒后页面跳转
BUL43BBG PDF预览

BUL43BBG

更新时间: 2024-09-27 03:21:39
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
59页 364K
描述
2A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BUL43BBG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.77
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):6JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):13 MHz
Base Number Matches:1

BUL43BBG 数据手册

 浏览型号BUL43BBG的Datasheet PDF文件第2页浏览型号BUL43BBG的Datasheet PDF文件第3页浏览型号BUL43BBG的Datasheet PDF文件第4页浏览型号BUL43BBG的Datasheet PDF文件第5页浏览型号BUL43BBG的Datasheet PDF文件第6页浏览型号BUL43BBG的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
2 AMPERES  
700 VOLTS  
40 WATTS  
The BUL43B has an application specific state–of–the–art die designed for use in  
220 V line operated Switchmode Power supplies and electronic ballast (“light  
ballast”). The main advantages brought by this new transistor are:  
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast and Tightened Switching Distributions  
FE  
— No Coil Required in Base Circuit for Fast Turn–Off (no current tail)  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
350  
650  
650  
9
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
V
CEO  
CBO  
V
V
CES  
EBO  
Collector Current — Continuous  
— Peak (1)  
I
C
2
4
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
1
2
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25 C  
C
*Derate above 25°C  
P
D
40  
0.32  
Watt  
W/ C  
Operating and Storage Temperature  
T , T  
65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
C/W  
R
θJC  
R
θJA  
3.125  
62.5  
Maximum Lead Temperature for Soldering Purposes:  
1/8from case for 5 seconds  
T
L
260  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle.  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
3–304  
Motorola Bipolar Power Transistor Device Data  

与BUL43BBG相关器件

型号 品牌 获取价格 描述 数据表
BUL43BBS ONSEMI

获取价格

2A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL43BBU ONSEMI

获取价格

2A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL43BBV ONSEMI

获取价格

2A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL43BDW ONSEMI

获取价格

2A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL44 ROCHESTER

获取价格

2A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, CASE 221A-06, 3 PIN
BUL44 MOTOROLA

获取价格

POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
BUL44 ONSEMI

获取价格

POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
BUL4416 MOTOROLA

获取价格

Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL4416A MOTOROLA

获取价格

Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44A MOTOROLA

获取价格

2A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB