Datasheet > BUK9MGP-55PTS,518

BUK9MGP-55PTS,518

更新时间： 2024-11-26 19:59:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	339K
描述
Dual TrenchPLUS logic level FET, SOT163-1 Package, Standard Markigg, Reel Dry Pack, SMD, 13"

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技术参数
数据手册

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BUK9MGP-55PTS,518 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

BUK9MGP-55PTS,518 数据手册

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BUK9MGP-55PTS

Dual TrenchPLUS logic level FET

Rev. 01 — 14 May 2009

Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode field-effect power transistor in SO20. Device is

manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring

very low on-state resistance, integrated current sensing transistors and over temperature

protection diodes.

1.2 Features and benefits

Integrated current sensors

Integrated temperature sensors

1.3 Applications

Lamp switching

Power distribution

Solenoid drivers

Motor drive systems

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max Unit

Static characteristics, FET1

R_DSon

drain-source

on-state resistance

V_GS= 5 V; I_D= 10 A;

T_j= 25 °C; see Figure 23;

see Figure 25

8.6

mΩ

I_D/I_senseratio of drain current T_j= 25 °C; V_GS= 5 V; see

8100 9000 9900 A/A

to sense current

Figure 27

V_(BR)DSSdrain-source

breakdown voltage

V_GS= 0 V; I_D= 250 µA;

T_j= 25 °C

Static characteristics, FET2

R_DSon

drain-source

V_GS= 5 V; I_D= 5 A;

T_j= 25 °C; see Figure 24;

see Figure 26

21.3 25

mΩ

on-state resistance

I_D/I_senseratio of drain current T_j= 25 °C; V_GS= 5 V; see

5910 6570 7227 A/A

to sense current

Figure 28

V_(BR)DSSdrain-source

breakdown voltage

V_GS= 0 V; I_D= 250 µA;

T_j= 25 °C

12 3 4 5 6 7...20

中文翻译

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