BUK765R2-40B

更新时间： 2024-11-26 09:02:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	193K
描述
N-channel TrenchMOS standard level FET

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BUK765R2-40B 数据手册

BUK765R2-40B

N-channel TrenchMOS standard level FET

Rev. 02 — 16 January 2009

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for standard level gate drive

sources

1.3 Applications

12 V loads

General purpose power switching

Motors, lamps and solenoids

Automotive systems

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1; see Figure 3;

[1]

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

203

494

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

I_D= 75 A; V_sup≤ 40 V;

R_GS= 50 Ω; V_GS= 10 V;

T_j(init)= 25 °C; unclamped

avalanche energy

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 10 V; I_D= 25 A;

V_DS= 32 V; T_j= 25 °C; see

Figure 14

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 11;

see Figure 12

4.4

5.2

mΩ

[1] Continuous current is limited by package.

12 3 4 5 6 7...13

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BUK765R2-40B 替代型号

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