Datasheet > BUK765R0-100E,118

BUK765R0-100E,118

更新时间： 2024-11-26 21:19:59

品牌	Logo	应用领域
恩智浦 - NXP		局域网开关脉冲晶体管
页数	文件大小	规格书
14页	209K
描述
N-channel TrenchMOS standard level FET D2PAK 3-Pin

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数据手册

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BUK765R0-100E,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.75	Base Number Matches：	1

BUK765R0-100E,118 数据手册

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BUK765R0-100E

D2P

N-channel TrenchMOS standard level FET

Rev. 2 — 16 May 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

 Repetitive avalanche rated

 True standard level gate with VGS(th)

rating of greater than 1V at 175 °C

1.3 Applications

 12V, 24V and 48V Automotive

 Start-Stop micro-hybrid applications

 Transmission control

systems

 Electric and electro-hydraulic power

 Ultra high performance power

steering

switching

 Motors, lamps and solenoid control

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

120

357

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; see Figure 1

[1]

I_D

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 11

3.9

mΩ

Q_GD

gate-drain charge

V_GS= 10 V; I_D= 25 A; V_DS= 80 V;

T_j= 25 °C; see Figure 13; see Figure 14

[1] Continuous current is limited by package.

12 3 4 5 6 7...14

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