Datasheet > BUK7613-100E,118

BUK7613-100E,118

更新时间： 2024-11-26 14:49:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	207K
描述
N-channel TrenchMOS standard level FET D2PAK 3-Pin

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数据手册

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BUK7613-100E,118 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	D2PAK	针数：	3
Reach Compliance Code：	not_compliant	风险等级：	5.74
Base Number Matches：	1

BUK7613-100E,118 数据手册

BUK7613-100E

N-channel TrenchMOS standard level FET

5 October 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True standard level gate with VGS(th) rating of greater than 1V at 175 °C

•

1.3 Applications

12V, 24V and 48V Automotive systems

•

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 1

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

182

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 20 A; T_j= 25 °C;

Fig. 11

10.2

25.4

mΩ

V_GS= 10 V; I_D= 20 A; V_DS= 80 V;

T_j= 25 °C; Fig. 13; Fig. 14

35.6

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