Datasheet > BUK663R2-40C,118

BUK663R2-40C,118

更新时间： 2024-11-24 22:59:47

品牌	Logo	应用领域
其他 - ETC		开关脉冲晶体管
页数	文件大小	规格书
14页	946K
描述
MOSFET N-CH 40V 100A D2PAK

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BUK663R2-40C,118 数据手册

BUK663R2-40C

N-channel TrenchMOS intermediate level FET

Rev. 2 — 14 October 2010

Product data sheet

1. Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for intermediate level gate

drive sources

1.3 Applications

12 V Automotive systems

Start-Stop micro-hybrid applications

Transmission control

Electric and electro-hydraulic power

steering

Ultra high performance power

Motors, lamps and solenoid control

switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

100

204

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

2.7

3.2

mΩ

on-state

T_j= 25 °C; see Figure 11

resistance

12 3 4 5 6 7...14

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