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BUK662R5-30C,118 PDF预览

BUK662R5-30C,118

更新时间: 2024-11-21 20:10:07
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
14页 173K
描述
N-channel TrenchMOS intermediate level FET D2PAK 3-Pin

BUK662R5-30C,118 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
针数:3Reach Compliance Code:not_compliant
风险等级:5.75Base Number Matches:1

BUK662R5-30C,118 数据手册

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BUK662R5-30C  
N-channel TrenchMOS intermediate level FET  
Rev. 2 — 14 October 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)  
in a plastic package using advanced TrenchMOS technology. This product has been  
designed and qualified to the appropriate AEC Q101 standard for use in high performance  
automotive applications.  
1.2 Features and benefits  
„ AEC Q101 compliant  
„ Suitable for thermally demanding  
environments due to 175 °C rating  
„ Suitable for intermediate level gate  
drive sources  
1.3 Applications  
„ 12 V Automotive systems  
„ Start-Stop micro-hybrid applications  
„ Transmission control  
„ Electric and electro-hydraulic power  
steering  
„ Ultra high performance power  
„ Motors, lamps and solenoid control  
switching  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source  
voltage  
Tj 25 °C; Tj 175 °C  
-
-
-
-
-
-
30  
V
[1]  
ID  
drain current  
VGS = 10 V; Tmb = 25 °C;  
see Figure 1  
100  
204  
A
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
W
Static characteristics  
RDSon drain-source  
VGS = 10 V; ID = 25 A;  
-
2.4  
2.8  
mΩ  
on-state  
Tj = 25 °C; see Figure 11  
resistance  
 
 
 
 
 

BUK662R5-30C,118 替代型号

型号 品牌 替代类型 描述 数据表
STD155N3LH6 STMICROELECTRONICS

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