Datasheet > BUK662R5-30C,118

BUK662R5-30C,118

更新时间： 2024-11-09 20:10:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	173K
描述
N-channel TrenchMOS intermediate level FET D2PAK 3-Pin

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技术参数
数据手册
替代型号

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BUK662R5-30C,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.75	Base Number Matches：	1

BUK662R5-30C,118 数据手册

BUK662R5-30C

N-channel TrenchMOS intermediate level FET

Rev. 2 — 14 October 2010

Product data sheet

1. Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for intermediate level gate

drive sources

1.3 Applications

12 V Automotive systems

Start-Stop micro-hybrid applications

Transmission control

Electric and electro-hydraulic power

steering

Ultra high performance power

Motors, lamps and solenoid control

switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

100

204

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

2.4

2.8

mΩ

on-state

T_j= 25 °C; see Figure 11

resistance

12 3 4 5 6 7...14

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BUK662R5-30C,118 替代型号

型号	品牌	替代类型	描述	数据表
STD155N3LH6	STMICROELECTRONICS	功能相似	N-channel 30 V, 2.4 mÎ© , 80 A, DPAK, DPAK ST
FDB8860	FAIRCHILD	功能相似	N-Channel Logic Level PowerTrench㈢ MOSFET

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