5秒后页面跳转
BUK445-200B PDF预览

BUK445-200B

更新时间: 2024-02-13 14:17:25
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 76K
描述
PowerMOS transistor

BUK445-200B 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):100 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):7 A
最大漏源导通电阻:0.28 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):80 pFJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:30 W
最大脉冲漏极电流 (IDM):28 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):170 ns
最大开启时间(吨):90 ns

BUK445-200B 数据手册

 浏览型号BUK445-200B的Datasheet PDF文件第2页浏览型号BUK445-200B的Datasheet PDF文件第3页浏览型号BUK445-200B的Datasheet PDF文件第4页浏览型号BUK445-200B的Datasheet PDF文件第5页浏览型号BUK445-200B的Datasheet PDF文件第6页浏览型号BUK445-200B的Datasheet PDF文件第7页 
Philips Semiconductors  
Product Specification  
PowerMOS transistor  
BUK445-200A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic full-pack envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in general purpose switching  
applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK445  
-200A  
200  
7.6  
30  
150  
0.23  
-200B  
200  
7
30  
150  
0.28  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
V
A
W
˚C  
Ptot  
Tj  
RDS(ON)  
PINNING - SOT186  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
case  
gate  
2
drain  
g
3
source  
case isolated  
1
2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
200  
200  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-200A  
7.6  
-200B  
ID  
Drain current (DC)  
Ths = 25 ˚C  
Ths = 100 ˚C  
Ths = 25 ˚C  
-
-
-
7
A
A
A
ID  
Drain current (DC)  
4.8  
4.4  
28  
IDM  
Drain current (pulse peak value)  
30  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Ths = 25 ˚C  
-
-
-
- 55  
-
30  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance junction to with heatsink compound  
-
-
-
4.17  
-
K/W  
K/W  
heatsink  
Thermal resistance junction to  
ambient  
55  
April 1993  
1
Rev 1.100  

与BUK445-200B相关器件

型号 品牌 获取价格 描述 数据表
BUK445-200B,127 NXP

获取价格

7A, 200V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
BUK445-200B127 NXP

获取价格

TRANSISTOR 7 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET
BUK445-400A ETC

获取价格

N-Channel Enhancement MOSFET
BUK445-400B ETC

获取价格

N-Channel Enhancement MOSFET
BUK445-450B ETC

获取价格

N-Channel Enhancement MOSFET
BUK445-500A ETC

获取价格

N-Channel Enhancement MOSFET
BUK445-500B PHILIPS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
BUK445-50A ETC

获取价格

N-Channel Enhancement MOSFET
BUK445-50B ETC

获取价格

N-Channel Enhancement MOSFET
BUK445-600A ETC

获取价格

N-Channel Enhancement MOSFET