Datasheet > BUK444-800A/B

BUK444-800A/B

更新时间： 2024-09-28 23:37:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	77K
描述
TRANSISTOR TO 220 MOSFET ISOLIERT

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中文翻译

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BUK444-800A/B 数据手册

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK444-800A/B

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plastic full-pack envelope.

The device is intended for use in

Switched Mode Power Supplies

(SMPS), motor control, welding,

DC/DC and AC/DC converters, and

in general purpose switching

applications.

SYMBOL

PARAMETER

MAX.

UNIT

BUK444

-800A

800

1.4

6.0

-800B

800

1.2

8.0

V_DS

I_D

Drain-source voltage

Drain current (DC)

Total power dissipation

Drain-source on-state

resistance

Ω

P_tot

R_DS(ON)

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

gate

drain

source

case isolated

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

Drain-source voltage

800

Drain-gate voltage

R_GS= 20 kΩ

Gate-source voltage

-800A

1.4

-800B

I_D

Drain current (DC)

T_hs= 25 ˚C

T_hs= 100 ˚C

T_hs= 25 ˚C

1.2

0.75

4.8

I_D

Drain current (DC)

0.9

I_DM

Drain current (pulse peak value)

5.6

P_tot

T_stg

T_j

Total power dissipation

Storage temperature

Junction Temperature

T_hs= 25 ˚C

- 55

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Thermal resistance junction to with heatsink compound

4.17

K/W

heatsink

Thermal resistance junction to

ambient

April 1993

Rev 1.100

12 3 4 5 6 7

中文翻译

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