Datasheet > BUK1M200-50SDLD,51

BUK1M200-50SDLD,51

更新时间： 2024-09-25 21:20:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	90K
描述
MOSFET N-CH 50V 20SOIC

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技术参数
数据手册

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BUK1M200-50SDLD,51 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

BUK1M200-50SDLD,51 数据手册

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BUK1M200-50SDLD

Quad channel TOPFET™

Rev. 01 — 02 April 2003

Product data

1. Product proﬁle

1.1 Description

Quad temperature and overload protected logic level power MOSFET in TOPFET™

technology in a 20-pin surface mount plastic package.

Product availability:

BUK1M200-50SDLD in SOT163-1 (SO20).

1.2 Features

■ Power TrenchMOS™

■ Overtemperature protection

■ Overload protection

■ Input-source voltage resets latched

protection circuitry.

■ 5 V logic compatible input level

■ Current limiting

■ ESD protection for all pins

■ Overfatigue clamping for turn off of

inductive loads

■ Input used to control output stage and ■ Low operating input current permits

supply overload protection circuits

direct drive by micro-controller.

1.3 Applications

■ Low-side driver

■ Low frequency Pulse Width

Modulation

■ DC switching

■ General purpose switch for driving

lamps, motors, solenoids and heaters.

1.4 Quick reference data

Table 1:

Symbol

R_DSon

P_tot

Quick reference data

Parameter

Min

Max

200

9.4

Unit

mΩ

drain-source on-state resistance

[1]

total power dissipation

junction temperature

drain-source voltage

T_j

150

°C

V_DS

[1] All devices active

12 3 4 5 6 7...14

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