BUJ301AX

更新时间： 2024-01-22 02:58:31

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
4页	25K
描述
Silicon Diffused Power Transistor

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技术参数
数据手册

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BUJ301AX 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	Is Samacsys：	N
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	10	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	32 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

BUJ301AX 数据手册

Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BUJ301AX

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

control systems, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CBO

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1000

500

0.5

Collector-Base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Fall time

P_tot

V_CEsat

t_f

T_mb≤ 25 ˚C

I_C= 0.2 A;I_B=20m A

Ic=0.2A,I_B1=20mA

1.0

160

145

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

case isolated

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

V_CBO

I_C

Collector to emitter voltage

V_BE= 0 V

1000

500

1000

0.5

0.2

0.3

150

Collector to emitter voltage (open base)

Collector to base voltage (open emitter)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

P_tot

T_stg

T_j

Base current peak value

Total power dissipation

T_mb≤ 25 ˚C

˚C

Storage temperature

-65

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Junction to mounting base

Junction to ambient

3.95

K/W

in free air

August 1998

Rev 1.000

12 3 4

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