BUJ205A

更新时间： 2024-02-05 04:12:31

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
4页	22K
描述
Silicon Diffused Power Transistor

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技术参数
数据手册

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BUJ205A 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	Is Samacsys：	N
最大集电极电流 (IC)：	8 A	配置：	Single
最小直流电流增益 (hFE)：	10	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	32 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

BUJ205A 数据手册

Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BUJ205A

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

systems, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CBO

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

850

450

Collector-Base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Fall time

P_tot

V_CEsat

t_f

T_mb≤ 25 ˚C

125

1.5

300

I_C= 5.0 A;I_B= 1.0 A

Ic=6A,I_B1=1.2A

µs

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

tab

base

collector

emitter

tab collector

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

V_CBO

I_C

Collector to emitter voltage

V_BE= 0 V

850

450

850

Collector to emitter voltage (open base)

Collector to base voltage (open emitter)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

P_tot

T_stg

T_j

125

150

Base current peak value

Total power dissipation

T_mb≤ 25 ˚C

˚C

Storage temperature

-65

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Junction to mounting base

Junction to ambient

K/W

in free air

August 1998

Rev 1.000

12 3 4

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