Datasheet > BUJ103A

BUJ103A

更新时间： 2024-04-09 19:02:18

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
14页	497K
描述
High-voltage, high-speed planar-passivated NPN power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

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BUJ103A 数据手册

BUJ103A

Silicon diﬀused power transistor

Rev.05 - 29 March 2018

Product data sheet

1. General description

High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78

(TO-220AB) plastic package.

2. Features and beneﬁts

•

Low thermal resistance

Fast switching

3. Applications

•

Inverters

Motor control systems

Electronic lighting ballasts

DC-to-DC converters

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_CESM

peak collector-emitter

voltage

V_BE= 0 V

700

I_C

collector current (DC)

P_tot

total power dissipation

T_mb≤ 25 °C; Fig. 1

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

h_FE

DC current gain

I_C= 1 A; V_CE= 5 V; T_mb= 25 °C;

Fig. 9

I_C= 500 mA; V_CE= 5 V; T_mb= 25 °C

12 3 4 5 6 7...14

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