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BUF12840

更新时间: 2024-11-21 12:50:03
品牌 Logo 应用领域
德州仪器 - TI 电压发生器
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8页 378K
描述
Programmable Gamma-Voltage Generator

BUF12840 数据手册

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BUF12840  
www.ti.com  
SBOS536 OCTOBER 2010  
Programmable Gamma-Voltage Generator  
with Integrated Two-Bank Memory and External EEPROM  
1
FEATURES  
DESCRIPTION  
2
10-BIT RESOLUTION  
The BUF12840 offers 12 programmable gamma  
channels with external electrically erasable  
programmable read-only memory (EEPROM) read  
capabilities.  
12-CHANNEL P-GAMMA  
READS FROM EXTERNAL EEPROM  
TWO INDEPENDENT PIN-SELECTABLE  
MEMORY BANKS  
The BUF12840 has two separate memory banks that  
allow simultaneous storage of two different gamma  
curves to facilitate switching between gamma curves.  
RAIL-TO-RAIL OUTPUT:  
300mV Min Swing-to-Rail (10mA)  
200mV Min Swing-to-Rail (5mA)  
All gamma channels offer a rail-to-rail output that  
typically swings to within 200mV of either supply rail  
with a 5mA load. All channels are programmed using  
a two-wire interface that supports standard operations  
up to 400kHz and high-speed data transfers up to  
3.4MHz.  
LOW SUPPLY CURRENT  
SUPPLY VOLTAGE: 9V to 20V  
DIGITAL SUPPLY: 2V to 5.5V  
TWO-WIRE INTERFACE: Supports 400kHz and  
3.4MHz Operation  
The BUF12840 is manufactured using Texas  
Instruments’ proprietary, state-of-the-art, high-voltage  
CMOS process. This process offers very dense logic  
and high supply voltage operation of up to 20V. The  
BUF12840 is offered in a QFN-24 package, and is  
specified from –40°C to +95°C.  
APPLICATIONS  
TFT-LCD REFERENCE DRIVERS  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2010, Texas Instruments Incorporated  

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