Datasheet > BUB323Z_05

BUB323Z_05

更新时间： 2024-01-06 12:06:17

品牌	Logo	应用领域
安森美 - ONSEMI		高压
页数	文件大小	规格书
8页	91K
描述
NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BUB323Z_05 数据手册

BUB323Z

NPN Silicon Power

Darlington

High Voltage Autoprotected

D²PAK for Surface Mount

http://onsemi.com

The BUB323Z is a planar, monolithic, high−voltage power

Darlington with a built−in active zener clamping circuit. This device is

specifically designed for unclamped, inductive applications such as

Electronic Ignition, Switching Regulators and Motor Control.

AUTOPROTECTED

DARLINGTON

10 AMPERES

360−450 VOLTS CLAMP

150 WATTS

Features

• Integrated High−Voltage Active Clamp

• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed

Over the −40°C to +125°C Temperature Range

• Clamping Energy Capability 100% Tested in a Live

Ignition Circuit

360 V

CLAMP

• High DC Current Gain/Low Saturation Voltages

Specified Over Full Temperature Range

• Design Guarantees Operation in SOA at All Times

• Pb−Free Packages are Available

MAXIMUM RATINGS

MARKING

DIAGRAM

Rating

Symbol

Value

350

Unit

Vdc

Adc

Collector−Emitter Sustaining Voltage

Collector−Emitter Voltage

CEO

EBO

6.0

Collector Current − Continuous

− Peak

BUB323ZG

AYWW

Base Current

− Continuous

− Peak

3.0

6.0

Adc

D PAK

CASE 418B

STYLE 1

Total Power Dissipation

@ T = 25_C

150

1.0

Derate above 25_C

W/_C

Operating and Storage Junction

Temperature Range

T , T

−65 to

+175

stg

BUB323Z = Specific Device Code

= Assembly Location

= Year

THERMAL CHARACTERISTICS

Characteristic

= Work Week

= Pb−Free Package

Symbol

Max

1.0

Unit

_C/W

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

62.5

260

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Maximum Lead Temperature

for Soldering Purposes,

1/8 in from Case for 5 Seconds

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

August, 2005 − Rev. 1

BUB323Z/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与BUB323Z_05相关器件

型号	品牌	获取价格	描述	数据表
BUB323ZG	ONSEMI	获取价格	NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount
BUB323ZT4	ONSEMI	获取价格	NPN Silicon Power Darlington
BUB323ZT4G	ONSEMI	获取价格	NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount
BUB931T	STMICROELECTRONICS	获取价格	HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS
BUB931TT4	STMICROELECTRONICS	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 400V V(BR)CEO \| 10A I(C) \| TO-263AB
BUB941T	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 400V V(BR)CEO \| 15A I(C) \| TO-263
BUB941TT4	STMICROELECTRONICS	获取价格	15A, 400V, NPN, Si, POWER TRANSISTOR, TO-263, TO-263, 3 PIN
BUB941ZT	STMICROELECTRONICS	获取价格	HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON
BUB941ZTT4	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 350V V(BR)CEO \| 15A I(C) \| TO-263
BUBOE27008CG04	ETC	获取价格	8W Dimmable Light Bulb

与BUB323Z_05相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

8
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

8
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

10
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

12

产品中心

服务支持

精选活动

关于我们

帮助中心

BUB323Z_05

BUB323Z_05 数据手册

与BUB323Z_05相关器件

与BUB323Z_05相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BUB323Z_05

BUB323Z_05 数据手册

与BUB323Z_05相关器件

与BUB323Z_05相关文章

您还可以找

您在本页遇到什么问题？