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BU931P PDF预览

BU931P

更新时间: 2024-11-16 09:02:19
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 136K
描述
Silicon NPN Power Transistors

BU931P 数据手册

 浏览型号BU931P的Datasheet PDF文件第2页浏览型号BU931P的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU931P  
DESCRIPTION  
·With TO-3PN package  
·DARLINGTON  
·High breakdown voltage  
APPLICATIONS  
·High ruggedness electronic ignitions.  
·High voltage ignition coil driver  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings (Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
500  
400  
5
UNIT  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
V
Open collector  
V
15  
A
ICM  
Collector current -peak  
Base current  
30  
A
IB  
1
A
IBM  
Base current -peak  
5
A
PT  
Total power dissipation  
Max.operating junction temperature  
Storage temperature  
TC=25ꢀ  
135  
175  
-65~175  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal resistance junction case  
1.1  
/W  
Rth j-case  

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