BU921

更新时间： 2024-02-11 09:31:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	105K
描述
isc Silicon NPN Power Transistor

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BU921 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU921

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)

APPLICATIONS

·Designed for automotive ignition applications and inverter

circuits for motor control.

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage V_BE= 0

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

VALUE

450

400

UNIT

I_CM

Collector Current-peak

Base Current

I_B

Collector Power Dissipation

@T_C=25℃

P_C

105

150

-65~150

℃

T_j

Junction Temperature

T_stg

Storage Temperature Range

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.2

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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